Features: ` Low capacitance. (C=2.0pF max)` Short reverse recovery time. (trr =3.0ns max)` U ltra small F lat P ackage (UFP) is suitable for surface mount design.PinoutSpecifications Item Symbol Value Unit Peak reverse voltage VRRM 85 V Reverse voltage VR 80 V...
HSC119: Features: ` Low capacitance. (C=2.0pF max)` Short reverse recovery time. (trr =3.0ns max)` U ltra small F lat P ackage (UFP) is suitable for surface mount design.PinoutSpecifications Item Sy...
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Item |
Symbol |
Value |
Unit |
Peak reverse voltage |
VRRM |
85 |
V |
Reverse voltage |
VR |
80 |
V |
Average forward current |
IO |
100 |
mA |
Peak forward current |
IFM |
300 |
mA |
Non-Repetitive peak forward surge current |
IFSM*1 |
40 |
mA |
Junction temperature |
Tj |
125 |
|
Storage temperature |
Tstg |
-55 to +125 |
The HSC119 is designed as one kind of silicon epitaxial planar diode that has three points of features:(1)Low capacitance. (C=2.0pF max); (2)Short reverse recovery time. (trr =3.0ns max); (3)Ultra small F lat P ackage (UFP) is suitable for surface mount design.
The absolute maximum ratings of the HSC119 can be summarized as:(1)Peak reverse voltage: 85 V;(2)Reverse voltage: 80 V;(3)Average forward current: 100 mA;(4)Peak rectified current: 300 mA;(5)Non-Repetitive peak forward surge current: 4 A;(6)Junction temperature: 125 °C;(7)Storage temperature:55 to +125 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.