HSD16M64B8W

Features: • Part IdentificationHSD16M64B8W-10 : 100MHz (CL=2)HSD16M64B8W-10L : 100MHz (CL=3)HSD16M64B8W-12 : 125MHz (CL=3)HSD16M64B8W-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• ...

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SeekIC No. : 004365989 Detail

HSD16M64B8W: Features: • Part IdentificationHSD16M64B8W-10 : 100MHz (CL=2)HSD16M64B8W-10L : 100MHz (CL=3)HSD16M64B8W-12 : 125MHz (CL=3)HSD16M64B8W-13 : 133MHz (CL=3)• Burst mode operation• Auto...

floor Price/Ceiling Price

Part Number:
HSD16M64B8W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Part Identification
HSD16M64B8W-10 : 100MHz (CL=2)
HSD16M64B8W-10L : 100MHz (CL=3)
HSD16M64B8W-12 : 125MHz (CL=3)
HSD16M64B8W-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 2M x 16bit x 4Banks SDRAM





Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 4.6V
Power Dissipation
PD
8W
Storage Temperature
TSTG
-55 to 150
Short Circuit Output Current
IOS
400mA





Description

The HSD16M64B8W is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy ubstrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The D16M64B8W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O ransactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows HSD16M64B8W to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






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