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HSD2118J

Features: • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)• Excellent DC Current Gain Characteristic• Complements the HSB1386JSpecifications• Maximum Temperatures Storage Temperature ......................................... -55 ~ +150 Junction Temperature ..................

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SeekIC No. : 004366002 Detail

HSD2118J: Features: • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)• Excellent DC Current Gain Characteristic• Complements the HSB1386JSpecifications• Maximum Temperatures Storage T...

HSD2118J Data Sheet

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Part Number:
HSD2118J
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)
• Excellent DC Current Gain Characteristic
• Complements the HSB1386J


Specifications

• Maximum Temperatures
  Storage Temperature ......................................... -55 ~ +150
  Junction Temperature ..................................... 150 Maximum
• Maximum Power Dissipation
  Total Power Dissipation (TA=25) .................................... 1 W
  Total Power Dissipation (TC=25) .................................. 10 W
• Maximum Voltages and Currents (TA=25)
  VCBO Collector to Base Voltage ....................................... 50 V
  VCEO Collector to Emitter Voltage .................................... 20 V
  VEBO Emitter to Base Voltage ............................................ 6 V
  IC Collector Current ........................................................... 5 A
  IC Collector Current (Pulse) ............................................. 10 A


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