HSD882S-P

The HSD882S-P belongs to the HSD882S series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for use in output stage of 1 W audio amplifier,voltage regulator,DC-DC converter and relay driver. It is available in the TO-92 package.

The following is the description about HSD882S-P's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 750 mW when TA is 25 ; (3): collector to base voltage(BVCBO) is 40 V and collector to emitter voltage(BVCEO) is 30 V,emitter to base voltage(VBEBO) is 5 V; (4): IC collector current is 3 A; (5): the minimum VBCBO is 40 V when IC 100 A; (7): the minimum BVCEO is 30 V when IC is 1 mA,and VBEBO is 5 V at IE is 10 A and IC is 0; (8): the maximum ICBO is 1A when VCB is 30 V and IE is 0,the maximum IEBO is 1 A at VEB is 3 V and IC is 0; (9): the maximum VCE(sat) is 0.5 V at the condition of IC is 2 A and IB is 200 mA; (10): the typical fT is 90 MHz at IC is 0.1 A,VCE is 5 V and f is 100 MHz.

If you want to know more information about the HSD882S-P,please download the datasheet at www.seekic.com.