HU603AL

The HU603AL is a N-channel logic lavel enhancement mode field effect transistor which has very high density process. It is suitable for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching,low inline power loss, and resistance to transients are needed.

The following is some information about its absolute maximum ratings at TA is 25 . (1): operating and storage temperature are both from -65 to 175 ; (2): total power dissipation at TC is 25 is 60 W and derate above 25 is 0.4 W/; (3): drain-source voltage is 30 V,gate-source voltage-continuous is ±20 V; (4): drain current-continuous is 30 A; (5): drain current-pulsed is 100 A; (6): thermal resistance,junction-to-case is 2.5 /W and thermal resistance,junction-to-ambient is 62.5 /W; (7): the minimum drain-source breakdown voltage is 30 V when VGS is 0 and ID is 250 A; (8): the maximum zero gate voltage drain current is 10 A when VDS is 30 V and VGS is 0 V; (9): the maximum gate-body leakage,forward is 100 nA at the condition of VGS is 20 V and VDS is 0 V; (10): gate-body leakage,reverse is -100 nA at VGS is -20 V and VDS is 0 V.

If you want more details,please download the datasheet at www.seekic.com and we will update in time.