MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CHAN 55V 20A TO-252AA
2500
.33540
838.50
| Technical/Catalog Information | HUF75321D3ST |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 25V |
| Power - Max | 93W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 44nC @ 20V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75321D3ST HUF75321D3ST |
HUF75229P3
PDF/DataSheet Download
These N-Channel power MOSFETs HUF75321D3Sare manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
These N-Channel power MOSFETs HUF75321D3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
This N-Channel power MOSFET HUF75309T3ST is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable ...
These N-Channel power MOSFETs HUF75309P3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
MOSFET N-CHAN 55V 19A TO-252AA
These N-Channel power MOSFETs HUF75309D3Sare manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
Price: 0.01-100 USD
rectifier, 200V, 75 A
Price: 1-10 USD
100 kHz switching frequency, TO-220-5, Current-mode operation, 5A Flyback Regulator
Price: 2-5 USD
highly-integrated microcontroller, 32-bit, 144-LQFP, 25MHz, 4.5 V ~ 5.5 V, CPU32
Price: 1-1000000 USD
semiconductor, -0.4 to +18V, CDIP16, CMOS compatible digital output, I2L-Linear bipolar technology
Price: 0.3-1 USD
Silicon N Channel, MOS FET, High Speed Power Switching, Low on-resistance
Price: 15.8-158 USD
RF Power Field Effect Transistor, SMD, 700W, Integrated ESD Protection, Pb-Free
Price: 1.5-2 USD
Video ADC, Low Power Averlogic, QFP, 10bit, Fast channel switch
Price: 0.8-1.5 USD
Single Phase, Bi-Directional Power/Energy IC, SSOP, 500 mW, - 0.3 to + 0.3 V
Price: 0.235-0.28 USD
TRIMMER 10 OHM 0.5W TH - 3362P-1-100
Price: 35-45 USD
12 VDC, 42 A, 504 W, DC-DC Converter, ASIC Design, PAF500F48-12
Price: 1-1.5 USD
Low Cost MMIC Mixer, 1400MHz to 2100 MHz, MSOP-8, High Isolation, 28 dB LO to RF
Price: 0.022-0.035 USD
ST Turbo 2, 600V, DO-214
