HUF75344A3

MOSFET 55V N-Channel

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SeekIC No. : 00161886 Detail

HUF75344A3: MOSFET 55V N-Channel

floor Price/Ceiling Price

Part Number:
HUF75344A3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-3PN
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A
• RoHS compliant



Specifications

Symbol Parameter Ratings Units
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
55
±20
V
V
ID
IDM
Drain Current
Drain Current
-Continuous (TC = 130)
- Pulsed
75
300
A
A
EAS Single Pulsed Avalanche Energy (Note 1) 1153 mJ
PD Power Dissipation (TC = 25)
- Derate above 25
288.5
1.92
W
W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300



Description

This N-channel power MOSFET HUF75344A3 is produced using Fairchild Semiconductor's innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. HUF75344A3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.




Parameters:

Technical/Catalog InformationHUF75344A3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4855pF @ 25V
Power - Max288.5W
PackagingTube
Gate Charge (Qg) @ Vgs208nC @ 20V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75344A3
HUF75344A3



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