MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm
HUF75631P3: MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 33 A | ||
| Resistance Drain-Source RDS (on) : | 0.04 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
|
HUF75631P3 |
UNITS | |||
| Drain to Source Voltage (Note 1) |
VDSS |
100 |
V | |
| Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
100 |
V | |
| Gate to Source Voltage |
VGS |
±20 |
V | |
| Drain Current Continuous (TC= 25, VGS = 10V)(Figure 2). |
ID |
33 |
A | |
| Drain Current Continuous (TC= 100, VGS = 10V)(Figure 2). |
ID |
23 |
A | |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
| Pulsed Avalanche Rating |
EAS |
Figures 6,14,15 |
||
| Power Dissipation |
PD |
120 |
W | |
| Derate Above 25 |
0.80 |
W/ | ||
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
| Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
||
| Technical/Catalog Information | HUF75631P3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 33A, 10V |
| Input Capacitance (Ciss) @ Vds | 1220pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 79nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75631P3 HUF75631P3 |