MFG:FAIRC Package Cooled:TO-262(I2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-262(I2PAK)
D/C: 09+
Description: These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanc...
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
|
UNITS | ||||
| Drain to Source Voltage (Note 1) |
VDSS |
100 |
V | |
| Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
100 |
V | |
| Gate to Source Voltage |
VGS |
±20 |
V | |
| rain Current Continuous (Figure 2). |
ID |
56 |
A | |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
| Pulsed Avalanche Rating |
EAS |
Figures 6,14,15 |
||
| Power Dissipation |
PD |
200 |
W | |
| Derate Above 25 |
1.35 |
W/ | ||
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
| Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
||
HUF75639S3
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These N-Channel power MOSFETs HUF75639P3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
These N-Channel power MOSFETs HUF75639G3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable...
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