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HUF75829D3S

MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET

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SeekIC No. : 00163522 Detail

HUF75829D3S: MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET

HUF75829D3S Data Sheet

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Part Number:
HUF75829D3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.11 Ohms


Features:

• Ultra Low On-Resistance
         - rDS(ON) = 0.110Ω, VGS = 10V
• Simulation Models
         - Temperature Compensated PSPICE® and SABER© Electrical Models
         - Spice and SABER© Thermal Impedance Models
         - www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 150 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current    
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID 18 A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 13 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 14, 15  
Power Dissipation . . . . . . .. . . . . . PD
 110 W
Derate Above . . . . . . . . . . . . .25 0.73 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF75829D3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs110 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75829D3S
HUF75829D3S



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