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HUF75842P3

MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch

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SeekIC No. : 00149572 Detail

HUF75842P3: MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch

HUF75842P3 Data Sheet

floor Price/Ceiling Price

US $ 1.06~1.64 / Piece | Get Latest Price
Part Number:
HUF75842P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.64
  • $1.33
  • $1.2
  • $1.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 43 A
Resistance Drain-Source RDS (on) : 0.042 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.042 Ohms
Continuous Drain Current : 43 A


Features:

• Ultra Low On-Resistance
      - rDS(ON) = 0.042Ω, VGS = 10V
• Simulation Models
      - Temperature Compensated PSPICE® and SABER™ Electrical Models
      - Spice and SABER Thermal Impedance Models
      - www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 150 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current    
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID 43 A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 30 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 14, 15  
Power Dissipation . . . . . . .. . . . . . PD
 230 W
Derate Above . . . . . . . . . . . . .25 1.53 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF75842P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs42 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds 2730pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs175nC @ 20V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75842P3
HUF75842P3



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