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HUF75925D3ST

MOSFET 200V NCh PowerMOSFET UltraFET

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SeekIC No. : 00161871 Detail

HUF75925D3ST: MOSFET 200V NCh PowerMOSFET UltraFET

HUF75925D3ST Data Sheet

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Part Number:
HUF75925D3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.275 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 11 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.275 Ohms


Features:

• Ultra Low On-Resistance
        - rDS(ON) = 0.275Ω, VGS = 10V
• Simulation Models
        - Temperature Compensated PSPICE® and SABER™ Electrical Models
        - Spice and SABER Thermal Impedance Models
        - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 200 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 200 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current    
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID 11 A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 8 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 14, 15  
Power Dissipation . . . . . . .. . . . . . PD
 100 W
Derate Above . . . . . . . . . . . . .25 1.5 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF75925D3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs275 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1030pF @ 25V
Power - Max100W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs78nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75925D3ST
HUF75925D3ST



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