MOSFET 20a 20V N-Ch Logic Level 0.022Ohm
HUF76013D3S: MOSFET 20a 20V N-Ch Logic Level 0.022Ohm
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
| Resistance Drain-Source RDS (on) : | 0.018 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252AA | Packaging : | Tube |
| SYMBOL | PARAMETER | HUF76112SK8 | UNITS |
| VDSS | Drain to Source Voltage (Note 1) | 20 | V |
| VDGR | Drain to Gate Voltage (RGS = 20kΩ) (Note 1) | 20 | V |
| VGS | Gate to Source Voltage | ±16 | V |
| ID ID IDM |
Drain Current Continuous (TA = 25, VGS = 10V) (Figure 2) (Note 2) Continuous (TA = 100, VGS = 5V) (Note 2) Pulsed Drain Current |
20 20 Figure 4 |
A A A |
| PD | Power Dissipation (Note 2) Derate Above 25oC |
50 0.4 |
W W/ |
| TJ, TSTG | Operating and Storage Temperature | -55 to 150 | |
| TL Tpkg |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 |
300 260 |
|
| THERMAL SPECIFICATIONS | |||
| RJA | Thermal Resistance Junction to Case, TO-220, TO-252 | 2.5 | /W |
| Thermal Resistance Junction to Case, TO-220, TO-252 | 62 | /W | |
| Thermal Resistance Junction to Case, TO-220, TO-252 | 100 | /W | |
| Technical/Catalog Information | HUF76013D3S |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 624pF @ 20V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF76013D3S HUF76013D3S |