HUF76131SK8

MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate

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SeekIC No. : 00166064 Detail

HUF76131SK8: MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate

floor Price/Ceiling Price

Part Number:
HUF76131SK8
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.013 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOP-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.013 Ohms
Package / Case : SOP-8


Features:

• Logic Level Gate Drive
• 10A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.013Ω
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
         - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Pinout

  Connection Diagram


Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . VDSS 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . .VDGR 30 V
Gate to Source Voltage . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . .ID 10 A
Pulsed Drain Current . . . . . . .. . . . . IDM Figure 5  
Pulsed Avalanche Rating. . . . . . . . . . EAS Figure 6  
Power Dissipation . . . . . . . . . . . . . . . . . PD
2.5 W
Derate Above 25 . . . . . . . . . . . . . . . . . . 0.02 W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg 260



Description

This N-Channel power MOSFET HUF76131SK8 is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76131SK8 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA76131.


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