HUF76132SK8

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.016 Ohms
Package / Case : SOP-8


Features:

• Logic Level Gate Drive
• 11.5A, 30V
• Simulation Models
         - Temperature Compensated PSPICE® and SABER© Electrical Models
         - Spice and SABER™ Thermal Impedance Models
         - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Related Literature
         - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

 

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . VDSS	30	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . .VDGR	30	V
Gate to Source Voltage . . . . . . . . . . . . VGS	±16	V
Drain Current
Continuous (TA= 25, VGS = 10V) (Figure 2) (Note 2) . . . . ID	11.5	A
Continuous (TA= 100, VGS = 5V) (Note 3) . . . . . . . . . . ID	3.3	A
Continuous (TA= 100, VGS = 4.5V) (Note 3) . . . . . . . . ID	3.2	A
Pulsed Drain Current . . . . . . .. . . . . IDM	Figure 4
Pulsed Avalanche Rating. . . . . . . . . . EAS	Figures 6, 17, 18
Power Dissipation(Note 2) . . . . . . . . . . . . . . . . . PD	2.5	W
Derate Above 25 . . . . . . . . . . . . . . . . . .	20	W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL	300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg	260

Description

This N-Channel power MOSFET HUF76132SK8 is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76132SK8 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.

Formerly developmental type TA76131.