HUF76137P3

MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch

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SeekIC No. : 00165632 Detail

HUF76137P3: MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch

floor Price/Ceiling Price

Part Number:
HUF76137P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.009W
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
         - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR 30 V
Gate to Source Voltage . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC= 25, VGS = 10V) (Figure 2) . . . . ID
75 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . ID 55 A
Continuous (TC= 100, VGS = 4.5V) . . . . . . . . ID 52 A
Pulsed Drain Current . . . . . . .. . . . . IDM Figure 4  
Pulsed Avalanche Rating. . . . . . . . . . EAS Figures 6, 17, 18  
Power Dissipation(Note 2) . . . . . . . . .. . . . PD
145 W
Derate Above 25 . . . . . . . . . . . . . . . . . . 1.16 W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG -40 to 150
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg 260



Description

These N-Channel power MOSFETs HUF76137P3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76137P3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA76137.




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