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HUF76137S3S

Features: • Logic Level Gate Drive• 75A, 30V• Ultra Low On-Resistance, rDS(ON) = 0.009W• Temperature Compensating PSPICE™ Model• Temperature Compensating SABER Model• Thermal Impedance SPICE Model• Thermal Impedance SABER Model• Peak Current vs...

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SeekIC No. : 004367362 Detail

HUF76137S3S: Features: • Logic Level Gate Drive• 75A, 30V• Ultra Low On-Resistance, rDS(ON) = 0.009W• Temperature Compensating PSPICE™ Model• Temperature Compensating SABER Mo...

HUF76137S3S Data Sheet

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Part Number:
HUF76137S3S
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.009W
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
         - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR 30 V
Gate to Source Voltage . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC= 25, VGS = 10V) (Figure 2) . . . . ID
 75 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . ID 55 A
Continuous (TC= 100, VGS = 4.5V) . . . . . . . . ID 52 A
Pulsed Drain Current . . . . . . .. . . . . IDM Figure 4  
Pulsed Avalanche Rating. . . . . . . . . . EAS Figures 6, 17, 18  
Power Dissipation(Note 2) . . . . . . . . .. . . . PD
 145 W
Derate Above 25 . . . . . . . . . . . . . . . . . . 1.16 W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG -40 to 150
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg 260



Description

These N-Channel power MOSFETs HUF76137S3S are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76137S3S  was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA76137.




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