HUFA75329P3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 49 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• 49A, 55V
• Ultra Low On-Resistance, r_DS(ON) = 0.024
• Temperature Compensating PSPICE® and SABER™ Models
   - Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Specifications

                                                                                                                          UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . .  . . V_DSS                 55                 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . . . . . V_DGR                 55                 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . V_GS                  ±20                V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . .. . . .............. I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ... I_DM
                                                                                                           49
                                                                                                       Figure 4
                                                                                                                                A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS    Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..P_D
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .      128
                                                                                                          0.86
                                                                                                                                 W
                                                                                                                                W/
Operating and Storage Temperature . . . . . . . . . . ......T_J, T_STG       -55 to 175        
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . .. T_L           300              
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . T_pkg          260                

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150.


Description

These N-Channel power MOSFETs HUFA75329P3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75329P3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage  bus switches, and power management in portable and battery-operated products. 

Formerly developmental type TA75329.

Parameters:

Technical/Catalog Information	HUFA75329P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	49A
Rds On (Max) @ Id, Vgs	24 mOhm @ 49A, 10V
Input Capacitance (Ciss) @ Vds	1060pF @ 25V
Power - Max	128W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75329P3 HUFA75329P3