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HUFA75545P3

MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET

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SeekIC No. : 00159873 Detail

HUFA75545P3: MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET

HUFA75545P3 Data Sheet

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Part Number:
HUFA75545P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 80 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• Ultra Low On-Resistance - rDS(ON)= 0.010,VGS=10V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal
   Impedance Models - www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . .. . . . . . . . . . . VDSS 80 V
Drain to Gate Voltage (RGS= 20k) (Note 1) . . . . . . . . . . . . . . . . . . . .VDGR 80 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
Continuous (TC= 25oC, VGS= 10V) (Figure 2) .. . . . . . . . . . . . . . . . . . . . . . ID 75A
Continuous (TC= 100oC, VGS= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . ID7 3A
Pulsed Drain Current . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . .ID MFigure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 270W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 1.8W/
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL 300
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . Tpkg 260
NOTES: 1. TJ= 25 to 150.
CAUTION:
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress only  rating  and  operation  of  the  device  at
these or any other conditions above those  indicated  in  the operational sections of
this specification is not implied.


Parameters:

Technical/Catalog InformationHUFA75545P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs10 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 3750pF @ 25V
Power - Max270W
PackagingTube
Gate Charge (Qg) @ Vgs235nC @ 20V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75545P3
HUFA75545P3



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