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HUFA75617D3ST

MOSFET 16a 100V N-Ch 0.090Ohm

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SeekIC No. : 00162063 Detail

HUFA75617D3ST: MOSFET 16a 100V N-Ch 0.090Ohm

HUFA75617D3ST Data Sheet

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Part Number:
HUFA75617D3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 16 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.09 Ohms


Parameters:

Technical/Catalog InformationHUFA75617D3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs90 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 570pF @ 25V
Power - Max64W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs39nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75617D3ST
HUFA75617D3ST



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