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HUFA76609D3

MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch

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SeekIC No. : 00162675 Detail

HUFA76609D3: MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch

HUFA76609D3 Data Sheet

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Part Number:
HUFA76609D3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Package / Case : TO-251


Features:

• Ultra Low On-Resistance
  - r DS(ON) = 0.160, VGS = 10V
  - r DS(ON) = 0.165, VGS = 5V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1)............................ VDSS 100V
Drain to Gate Voltage (RGS = 20k) (Note 1)  ..................... VDGR 100V
Gate to Source Voltage  ................................ VGS ±16 V
Drain Current
Continuous (TC = 25, VGS = 5V)   ............................. ID10A
Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID10A
Continuous (TC = 100, VGS = 5V)    .............................ID7A
Continuous (TC = 100, VGS = 4.5V) (Figure 2)   .......................ID7A
Pulsed Drain Current  .................................IDM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation.....................................V PD49W
Derate Above 25   ...................................0.327W/
Operating and Storage Temperature.....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   .......................TL300
Package Body for 10s, See Techbrief TB334 .......................Tpkg260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Parameters:

Technical/Catalog InformationHUFA76609D3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs160 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 425pF @ 25V
Power - Max49W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76609D3
HUFA76609D3



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