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HUFA76609D3ST

MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch

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SeekIC No. : 00162294 Detail

HUFA76609D3ST: MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch

HUFA76609D3ST Data Sheet

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Part Number:
HUFA76609D3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Package / Case : TO-252AA


Parameters:

Technical/Catalog InformationHUFA76609D3ST
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs160 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 425pF @ 25V
Power - Max49W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76609D3ST
HUFA76609D3ST
HUFA76609D3STCT ND
HUFA76609D3STCTND
HUFA76609D3STCT



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