Features: ·HVCMOS technology for high performance·High density integration ultrasound transmitter·0 to ±90V output voltage·±2.2A source and sink current in PW mode·±580mA source and sink current in CW mode·Up to 20MHz operating frequency·Matched delay times·1.2V to 5.0V CMOS logic interface·Built-...
HV758: Features: ·HVCMOS technology for high performance·High density integration ultrasound transmitter·0 to ±90V output voltage·±2.2A source and sink current in PW mode·±580mA source and sink current in ...
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Parameter | Value |
VSS, Power supply reference | 0V |
VLL, Positive logic supply | -0.5V to +7.0V |
VDD, Positive logic and level translator supply | -0.5V to +14V |
(VPP - VPF) Positive floating gate drive supply | -0.5V to +14V |
(VNF - VNN) Negative gate fl oating drive supply | -0.5V to +14V |
(VPP - VNN) Differential high voltage supply | +190V |
VPP, High voltage positive supply | -0.5V to +95V |
VNN, High voltage negative supply | +0.5V to -95V |
OTP, Over Temperature Protection output | -0.5V to +7.0V |
All logic input PINX, NINX and EN voltages | -0.5V to +7.0V |
(VSUB - VPP) Substrate to VPP voltage difference | +190V |
(VPP - TXPX) VPP to TXPX voltage difference | +190V |
(VSUB - TXPX) Substrate to TXPX voltage difference | +190V |
(TXNX - VNN ) TXNX to VNN voltage difference | +190V |
Operating temperature | -40 to +125 |
Storage temperature | -65 to +150 |
Thermal resistance, JA, (4 layer, 1oz., 4x3", 36-via PCB) | 12.8/W |
The Supertex HV758 is a four-channel, monolithic high voltage, high-speed pulse generator. It is designed for medical ultrasound applications. This high voltage and high-speed integrated circuit can also be used for other piezoelectric, capacitive or MEMS transducers in ultrasonic nondestructive detection and sonar ranger applications.
The HV758 comprises a controller logic interface circuit, level translators, MOSFET gate drives and high current power Pchannel and N-channel MOSFETs as the output stage for each channel.
The output current limit can be set to one of four levels by using two mode control inputs. The output stages of each channel are designed to provide peak output currents over ±2.5A when in mode 4, with up to 180V swings. When in mode 1, the output stages reduce the peak current to ±580mA for CW mode operation, which reduces the power dissipation of the HV758. The power MOSFET gate drivers are supplied by two fl oating 10VDC power supplies referenced to VPP and VNN. This direct coupling topology of the gate drivers not only saves two high voltage capacitors per channel, but also makes the PCB layout easier.