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HWF1682RA

Features: • High Output Power: P1dB=37 dBm (typ.)• High Gain: GL=11.5 dB (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=48 dBm(typ.)• Class A or Class AB Operation• Low CostSpecifications VDS[1] Drain to Source Voltage +15V VGS Ga...

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SeekIC No. : 004367979 Detail

HWF1682RA: Features: • High Output Power: P1dB=37 dBm (typ.)• High Gain: GL=11.5 dB (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=48 dBm(typ.)• Class A or Class AB...

HWF1682RA Data Sheet

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Part Number:
HWF1682RA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High Output Power: P1dB=37 dBm (typ.)
• High Gain: GL=11.5 dB (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=48 dBm(typ.)
• Class A or Class AB Operation
• Low Cost


Specifications

VDS[1]
 Drain to Source Voltage
+15V
VGS
 Gate to Source Voltage
-5V
ID
 Drain Current
IDSS
IG
 Gate Current
10 mA
TCH
 Channel Temperature
175
TSTG
 Storage Temperature
-65 to +175
PT[2]
 Power Dissipation
15 W
[1] Hexawave recommends that the quiescent drain-source operating voltage (VDS) should not
     exceed 10 Volts.
[2] Mounted on an infinite heat sink.


Description

The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications.

HWF1682RA is presently offered in a low cost, surface-mountable ceramic package.




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