HWL23NPB

Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Application• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Ga...

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SeekIC No. : 004367989 Detail

HWL23NPB: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Application• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Vol...

floor Price/Ceiling Price

Part Number:
HWL23NPB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless





Application

• High Efficiency
• 3V to 6V Operation




Specifications

VDS
Drain to Source Voltage
+7V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
1mA
TCH
Channel Temperature
150
TSTG
Storage Temperature
-65 to +150
PT
Power Dissipation
0.7 Watt





Description

The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications






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