HWL34YRA

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 14.5 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS Drain-Source Voltage +15 V VGS Gate-Source Voltage -5 V ID Drain Current Idss IG Gate ...

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SeekIC No. : 004368003 Detail

HWL34YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 14.5 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS D...

floor Price/Ceiling Price

Part Number:
HWL34YRA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 14.5 dB Typical Gain at 2.4GHz
• 5V to 10V Operation





Specifications

Symbol Parameter Rating
VDS Drain-Source Voltage +15 V
VGS Gate-Source Voltage -5 V
ID Drain Current Idss
IG Gate Current 6mA
PT Continuous Dissipation 12 W
TCH Channel Temperature 175
TSTG Storage Temperature - 65 to +175





Description

The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.




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