Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 14.5 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS Drain-Source Voltage +15 V VGS Gate-Source Voltage -5 V ID Drain Current Idss IG Gate ...
HWL34YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 14.5 dB Typical Gain at 2.4GHz• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS D...
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| Symbol | Parameter | Rating |
| VDS | Drain-Source Voltage | +15 V |
| VGS | Gate-Source Voltage | -5 V |
| ID | Drain Current | Idss |
| IG | Gate Current | 6mA |
| PT | Continuous Dissipation | 12 W |
| TCH | Channel Temperature | 175 |
| TSTG | Storage Temperature | - 65 to +175 |