HX2000r

The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell's RICMOS™ IV Silicon On Insulator (SOI) process.

The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates. The high density and performance characteristics of the RICMOS (Radiation Insensitive CMOS) SOI process make possible device operation beyond 100 MHz over the full military temperature range, even after exposure to ionizing radiation exceeding 1x106 rad(SiO2). Flip- Flops have been designed for a Soft Error Rate (SER) of less than 1x10-11 errors/bit/day in the Adams 90% worst case environment.

Each HX2000/HX2000r design is founded on our proven RICMOS ASIC library of SSI and MSI logic elements,configurable RAM cells, and selectable I/O pads. The gate arrays feature a global clock network capable of handling multiple clock signals with low clock skew between registers.

This HX2000r family is fully compatible with Honeywell's high reliability screening procedures and consistent with QML Class Q and V requirements. Designers can choose from a wide variety of I/O types.

Output buffer options of HX2000r include 8 drive strengths, CMOS/TTL levels, IEEE 1149.1 boundary scan, pull-up/pull-down resistors, and three-state capability. Input buffers can be selected for CMOS/TTL/Schmitt trigger levels, IEEE 1149.1 boundary scan and pull-up/pull-down resistors.Bi-directional buffers are also available.

An important feature of HX2000r is the dual voltage I/O capability in which the designer has complete flexibility in terms of placement of I/O buffers. This feature allows adjacent I/O buffers with different supply voltages.

The HX2000/HX2000r families provide options for configurable multi-port SRAMs. Word widths can be selected in single bit increments. A variety of SRAM read and write port options are available to serve most applications. Custom drop-in macrocells can also be implemented to further increase chip density. Word widths can be selected in two bit increments. Single port and two port options are available.

The HX2000/HX2000r families have a special feature to allow a chip level power down mode, in which the associated buses connected to the chip can remain active. This high impedance off-state buffer feature allows users to power down portions of their system for power savings or for cold sparing.

With HX2000r,logic designers need not have prior experience in radiation hardening. Honeywell's VDS™ Toolkit and RICMOS IV SOI libraries provide the necessary guidance to achieve first pass design success. The VDS Toolkit supports industry standard platforms including those offered by Mentor Graphics and Synopsys.

Honeywell can perform design translations to the HX2000r arrays from other CAD platforms. Our synthesis capabilities allow customers to use familiar CAD tools and libraries to map existing designs to Honeywell library components.

The HX2000r family of gate arrays is the right choice for your high reliability applications demanding high density and radiation performance. To learn more about Honeywell's variety of space components, call us at 612-954-2888.