HXTR-3001

The HXTR-3001 is a kind of low cost NPN silicon bipolar transistor chip which is designed for high gain and wide dynamic range at VHF, UHF and microwave frequencies. The chip is silicon nitride passivated, and is provided with large gold bonding pads for ease of use in most hybrid applications.

There are some features about HXTR-3001 as follows: (1)high gain: 15 dB typical |S21E|2 at 1 GHz; (2)high output power: 21 dBm P1dB typical at 1 GHz; (3)low noise figure: 1.5 dB typical at 1 GHz; (4)large gold bonding pads; (5)available in low cost hermetic and surface mount package.

The following is about the HXTR-3001 absolute maximum ratings (TA=25): (1)VCBO, collector to base voltage: 30 V; (2)VCEO, collector to emitter voltage: 20 V ; (3)VEBO, emitter to base voltage: 1.5 V; (4)IC, DC collector current: 70 mA; (5)PT, total device dissipation: 900 mW; (6)TJ, junction temperature: 200; (7)TSTG, storage temperature: -65 to +300.

The last one is about the HXTR-3001 electrical specifications: (1)ICEO, collector-emitter leakage current at VCE=15 V: 500 nA max; (2)ICBO, collector-base cutoff current at VCB=15 V: 100 nA max; (3)hFE, forward current transfer ratio at VCE=15 V, IC=15 mA: 50 min, 100 typ and 220 max; (4)NFMIN, minimum noise figure at VCE=10 V, IC=7 mA: 1.2 dB typ at f=500 MHz, 1.5 dB typ at f=1000 MHz, 2.2 dB typ at f=2000 MHz; (5)MAG, maximum available gain at VCE=15 V, IC=15 mA: 16.0 dB typ at f=2000 MHz; (6)P1dB, power output at 1 dB gain compression at VCE=15 V, IC=25 mA: 21.0 dBm typ at f=1000 MHz and 19.0 dBm typ at f=2000 MHz.