HY27SA081G1M

Features: HIGH DENSITY NAND FLASH MEMORIES- Cost effective solutions for mass storage applicationsNAND INTERFACE- x8 or x16 bus width.- Multiplexed Address/ Data- Pinout compatibility for all densitiesSUPPLY VOLTAGE- 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M- 1.8V device: VCC = 1.7 to 1.95V : ...

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SeekIC No. : 004368148 Detail

HY27SA081G1M: Features: HIGH DENSITY NAND FLASH MEMORIES- Cost effective solutions for mass storage applicationsNAND INTERFACE- x8 or x16 bus width.- Multiplexed Address/ Data- Pinout compatibility for all densit...

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Part Number:
HY27SA081G1M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/25

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Product Details

Description



Features:

HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M
1.8V Operation Product : TBD
Memory Cell Array
- 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks
PAGE SIZE
- x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M
- x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes : HY27(U/S)A081G1M
- x16 device: (8K + 256 spare) Words : HY27(U/S)A161G1M
PAGE READ / PROGRAM
- Random access: 12us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
Sequential Row Read Option
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27(U/S)A(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-T (Lead)
- HY27(U/S)A(08/16)1G1M-TP (Lead Free)
- HY27(U/S)A08121A-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27(U/S)A081G1M-V (Lead)
- HY27(U/S)A081G1M-VP (Lead Free)
- HY27(U/S)A(08/16)121M-F(P) : 63-Ball FBGA (8.5 x 15 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-F (Lead)
- HY27(U/S)A(08/16)1G1M-FP (Lead Free)



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NAND Flash
Unit
Min
Max
TBTAS
Temperature Under Bias
-50
125
TSTG
Storage Temperature
-65
150
VIO (1)
Input or Output Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
VCC
Supply Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to VCC + 2V for less than 20ns during transitions on I/O pins.


Description

The HYNIX HY27SA081G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The HY27SA081G1M address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus.

HY27SA081G1M interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The devices HY27SA081G1M feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back command is available to optimize the management of defective blocks. With the HY27SA081G1M,when a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.

The devices HY27SA081G1M are available in the following packages:
- 48-TSOP1 (12 x 20 x 1.2 mm)
- 48-WSOP1 (12 x 17 x 0.7 mm)
- 63-FBGA (8.5 x 15 x 1.2 mm, 6 x 8 ball array, 0.8mm pitch)

Three options are available for the HY27SA081G1M NAND Flash family:
- Automatic Page 0 Read after Power-up, which allows the microcontroller to directly download the boot code from page 0.
- Chip Enable Dont Care, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation.
- A Serial Number, which allows each device to be uniquely identified. The Serial Number options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest HYNIX Sales office.

Devices HY27SA081G1M are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to '1'.




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