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Part Number: HY51V65163HG

 

 

 

 

Description: This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out ...


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HY51V65163HG General Description


This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh).

Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability

HY51V65163HG Maximum Ratings

Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
Storage Temperature
TSG
-55 ~ 125
Voltage on Any Pin relative to VSS
VT
-0.5 ~ Vcc + 0.5
(Max 4.6V)
V
Voltage on VDD relative to VSS
VCC
-0.5 ~ 4.6
V
Short Circuit Output Current
IOUT
50
mA
Power Dissipation
PT
1
W
Note : Operation at above absolute maximum rating can adversely affect device reliability.

HY51V65163HG Features

• Extended data out operation
• Read-modify-write capability
• Multi-bit parallel test capability
• LVTTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout 50pin plastic SOJ/TSOP-II(400mil)
• Single power supply of 3.3V +/- 10%
• Battery back up operation(L-version)

HY51V65163HG Connection Diagram

HY51V65163HG  Connection Diagram

HY51V65163HG datasheet

HY51V65163HG
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