Purchase HY5PS12821FP, In-stock HY5PS12821FP From SeekIC.
Part Number: HY5PS12821FP
Description: 1.1 Device Features and Ordering Information1.1.1 Key Feaures1.1.2 Ordering Information1.1.3 Ordering Frequ...
- Table of contents:
HY5PS12821FP
-
Suppliers
DataSheet
General Description
HY5PS12821FP General Description
1.1 Device Features and Ordering Information
1.1.1 Key Feaures
1.1.2 Ordering Information
1.1.3 Ordering Frequency
1.2 Pin configuration
1.3 Pin Description
HY5PS12821FP Maximum Ratings
| Symbol | Parameter | Rating | Units | Notes |
| VDD | Voltage on VDD pin relative to Vss | - 1.0 V ~ 2.3 V | V | 1 |
| VDDQ | Voltage on VDDQ pin relative to Vss | - 0.5 V ~ 2.3 V | V | 1 |
| VDDL | Voltage on VDDL pin relative to Vss | - 0.5 V ~ 2.3 V | V | 1 |
| VIN, VOUT | Voltage on any pin relative to Vss | - 0.5 V ~ 2.3 V | V | 1 |
| TSTG | Storage Temperature | -55 to +100 | 1, 2 |
1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the denter/top side of the DRAM. For the measurement conditions. Please refer to JESD51-2 standard.
HY5PS12821FP Features
• VDD=1.8V
• VDDQ=1.8V +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write(centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched
on the rising edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal four bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x4/x8) & 84ball FBGA(x16)
• Full strength driver option controlled by EMRS
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe suupported (x8 only)
• Self-Refresh High Temperature Entry
• Lead Free Package
• VDDQ=1.8V +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write(centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched
on the rising edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal four bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x4/x8) & 84ball FBGA(x16)
• Full strength driver option controlled by EMRS
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe suupported (x8 only)
• Self-Refresh High Temperature Entry
• Lead Free Package
HY50P
PDF/DataSheet Download
- Datasheet: HY50P
- File Size: 121146 KB
- Manufacturer: LEM [LEM]
- Click here to Download
- ·HY50-P
- LEM [LEM]
- Current Transducer HY 50-P
- 133163 KB
- ·HY5116404B
- Hyundai
- 104611 KB
- ·HY5117404B
- Hyundai
- 104611 KB
- ·HY5117404BJ-60
- x4 EDO Page Mode DRAM
- 438835 KB
- ·HY5118164
- Hynix
- IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC
- 471769 KB
- ·HY514400
- ETC [ETC]
- 1M x 4-bit CMOS DRAM
- 938750 KB
- ·HY514400A
- ETC [ETC]
- 1M x 4-bit CMOS DRAM
- 823647 KB
- ·HY514400AJ
- ETC [ETC]
- 1M x 4-bit CMOS DRAM
- 823647 KB
HY5PS12821FP Relative Products
HY5PS12821F
HY5PS12421L
HY5PS12421FP
The features of HY5PS12421FP: 1.1 Device Features and Ordering Information1.1.1 Key Feaures1.1.2 Ordering Information1.1.3 Ordering Frequency1.2 Pin configuration1.3 Pin Description
HY5PS12421F
HY5PS12421(L)F
HY5PS121621LFP-C4
The HY5PS121621LFP-C4 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*16 device. It is available in 84ball FBGAs(*16) package. Then is some information about the operating frequency: tCK=3.75 ns; CL=4 Clk; tRCD=4 Clk; tRP=4 Clk. There are some HY...
Hotspot Suppliers Product
EKMM3B1VSN181MN40S
Price: 0.01-100 USD
aluminum electrolytic capacitor, KMM series , 180μF, 0.90Arms
88E6063-C1-RCJ
Price: 0.1-0.9 USD
7-port fast ethernet switch, 88E6063-C1-RCJ, QFP128
PIC16F819-I/SO
Price: 0.01-100 USD
18/20-Pin Enhanced Flash Microcontroller, SOP18, -0.3 to +7.5V, Low-Voltage
ELXG250VSN822MQ35S
Price: 0.1-50 USD
capcacitor, -40 to +105℃, 10 to 100Vdc
2N3635
Price: 1-1 USD
PNP, epitaxial planar transistor, TO-39
MRF6S27050
Price: 1-100 USD
RF Power Field Effect Transistor, SMD, RoHS Compliant, 2500 to 2700 MHz, 68 Vdc
MC1404U5
Price: 1-11 USD
temperature–compensated voltage reference, CDIP-8, + 2.5 V to 40 V, 1.25 mA
MC68HC908GP32CP
Price: 0.1-50 USD
low-cost, high-performance, 8-bit microcontroller, DIP, -0.3 to + 6.0 V, 150 mA, 8-MHz internal b...
IRF9540NPBF
Price: 0.5-3.2 USD
Power MOSFET, TO-220, -23A
LM2678S-ADJ
Price: 0.29-2.99 USD
High Efficiency, 5A Step-Down Voltage Regulator, TO-263, 120 mΩ DMOS output switch
MT093AE
Price: 0.95-1.25 USD
8 x 12 Analog Switch Array, DIP40, -0.3 to 16.0V, 0.6W, ±15 mA, Wide operating voltage
MBM27C512-20
Price: 2.38-2.55 USD
MBM27C512-20 Fujitsu 64K x 8 CMOS EPROM Memory
