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HY64UD16322A

Features: • CMOS Process Technology• 2M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin configuration : 48-FBGA(6mmX8mm)• Data mask function by /LB, /UB• Separated I/O Power Supply ...

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SeekIC No. : 004368404 Detail

HY64UD16322A: Features: • CMOS Process Technology• 2M x 16 bit Organization• TTL compatible and Tri-state outputs• Deep Power Down : Memory cell data hold invalid• Standard pin confi...

HY64UD16322A Data Sheet

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Part Number:
HY64UD16322A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• CMOS Process Technology
• 2M x 16 bit Organization
• TTL compatible and Tri-state outputs
• Deep Power Down : Memory cell data hold invalid
• Standard pin configuration : 48-FBGA(6mmX8mm)
• Data mask function by /LB, /UB
• Separated I/O Power Supply : Vddq


Specifications

Symbol
Parameter
Rating
Unit
Remark
VIN
 Input Voltage
-0.3 to Vdd+0.3
V
VOUT
 Output Voltage
-0.3 to Vddq+0.3
V
Vdd
 Core Power Supply
-0.3 to 3.6
V
Vddq
 I/O Power Supply
-0.3 to 3.6
V
TA
 Ambient Temperature
-25 to 85
°C
HY64UD16322A-E
-40 to 85
°C
HY64UD16322A-I
TSTG
 Storage Temperature
-55 to 150
°C
PD
 Power Dissipation
1.0
W
TSOLDER
 Ball Soldering Temperature & Time
260 ·10
°C·sec
  
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.


Description

The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended range of temperature and supports a wide operating voltage range. It also supports the deep power down mode for a super low standby current. The HY64UD16322A delivers the high-density low power SRAM capability to the high-speed low power system.




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