The 512-Mb DDR2 DRAM HYB18T512400AFis a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 Mbit × 4 I/O × 4 banks, 16 Mbit × 8 I/O ...