HYB3164805T

Operating temperature range......................................0 to 70
Storage temperature range................................. 55 to 150
Input/output voltage.........................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage............................................-0.5V to 4.6 V
Power dissipation..............................................................1.0 W
Data out current (short circuit)..........................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.

This HYB3164805T is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)805 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)805 to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These packages HYB3164805T provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)805TL parts have a very low power „sleep mode" supported by Self Refresh.