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Part Number: HYB3164805T
Description: This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in ...
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HYB3164805T
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General Description
HYB3164805T General Description
This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)805 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)805 to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)805TL parts have a very low power „sleep mode" supported by Self Refresh.
HYB3164805T Maximum Ratings
Operating temperature range......................................0 to 70
Storage temperature range................................. 55 to 150
Input/output voltage.........................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage............................................-0.5V to 4.6 V
Power dissipation..............................................................1.0 W
Data out current (short circuit)..........................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
HYB3164805T Connection Diagram
HYB3164805T-50
PDF/DataSheet Download
- Datasheet: HYB3164805T-50
- File Size: 488488 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·HYB 3117805BJ-50
- 2M x 8 - Bit Dynamic RAM 2k Refresh
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- ·HYB 3117805BJ-60
- 2M x 8 - Bit Dynamic RAM 2k Refresh
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- ·HYB 3117805BJ-70
- 2M x 8 - Bit Dynamic RAM 2k Refresh
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- ·HYB 3164160T-50
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- 4M x 16-Bit Dynamic RAM
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- ·HYB 3165160T-50
- 4M x 16-Bit Dynamic RAM
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- ·HYB 3165160T-60
- 4M x 16-Bit Dynamic RAM
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HYB3164805T Relative Products
HYB3164805L
This HYB3164805L is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high perfo...
HYB3164805J-60
This HYB3164805J-60 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high pe...
HYB3164805J-50
This HYB3164805J-50 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high pe...
HYB3164805J
This HYB3164805J is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high perfo...
HYB3164805AT(L)-40
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