Purchase HYB3165160AT(L)-60, In-stock HYB3165160AT(L)-60 From SeekIC.
Part Number: HYB3165160AT(L)-60
Description: This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second gen...
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HYB3165160AT(L)-60
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DataSheet
General Description
HYB3165160AT(L)-60 General Description
This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160AT to be packaged in a 400 mil wide TSOP-50 package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5/6)160ATL parts (L-version) have a very low power „sleep mode" supported by Self Refresh.
HYB3165160AT(L)-60 Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.......................................................................................... 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.....................................................................................................-0.5V to 4.6 V
Power dissipation........................................................................................................................1.3 W
Data out current (short circuit)....................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
Storage temperature range.......................................................................................... 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.....................................................................................................-0.5V to 4.6 V
Power dissipation........................................................................................................................1.3 W
Data out current (short circuit)....................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
HYB3165160AT(L)-60 Connection Diagram
HYB 3117805BJ-50
PDF/DataSheet Download
- Datasheet: HYB 3117805BJ-50
- File Size: 264407 KB
- Manufacturer:
- Click here to Download
- ·HYB 3117805BJ-60
- 2M x 8 - Bit Dynamic RAM 2k Refresh
- 264407 KB
- ·HYB 3117805BJ-70
- 2M x 8 - Bit Dynamic RAM 2k Refresh
- 264407 KB
- ·HYB 3164160T-50
- 4M x 16-Bit Dynamic RAM
- 376686 KB
- ·HYB 3164160T-60
- 4M x 16-Bit Dynamic RAM
- 376686 KB
- ·HYB 3165160T-50
- 4M x 16-Bit Dynamic RAM
- 376686 KB
- ·HYB 3165160T-60
- 4M x 16-Bit Dynamic RAM
- 376686 KB
- ·HYB 39S512160AT-7
- 512-Mbit Synchronous DRAM
- 735429 KB
- ·HYB 39S512160AT-7.5
- 512-Mbit Synchronous DRAM
- 735429 KB
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