Purchase HYB3165165T-50, In-stock HYB3165165T-50 From SeekIC.
Part Number: HYB3165165T-50
Description: This HYB3164(5)165 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in...
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HYB3165165T-50
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DataSheet
General Description
HYB3165165T-50 General Description
This HYB3164(5)165 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5)165 to be packaged in a 500mil wide TSOPII-54 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)165TL parts have a very low power „sleep mode" supported by Self Refresh.
HYB3165165T-50 Maximum Ratings
Operating temperature range..............................................................................................0 to 70
Storage temperature range......................................................................................... 55 to 150
Input/output voltage.................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation.....................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
Storage temperature range......................................................................................... 55 to 150
Input/output voltage.................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation.....................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
HYB3165165T-50 Connection Diagram
HYB3165165T-50
PDF/DataSheet Download
- Datasheet: HYB3165165T-50
- File Size: 400723 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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