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Part Number: HYB3165800AT

 

 

 

 

Description: This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an adv...


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HYB3165800AT General Description


This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800AJ/AT to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5)800ATL parts (L-versions) have a very low power „sleep mode" supported by Self Refresh

HYB3165800AT Maximum Ratings

Operating temperature range......................................0 to 70
Storage temperature range................................ 55 to 150
Input/output voltage.......................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage..........................................-0.5V to 4.6 V
Power dissipation.............................................................1.0 W
Data out current (short circuit)........................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.

HYB3165800AT Connection Diagram

HYB3165800AT  Connection Diagram

HYB3165800AT datasheet

HYB3165800AT-40
PDF/DataSheet Download

  • Datasheet: HYB3165800AT-40
  • File Size: 253781 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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