HYB3165800J

HYB3165800AT

This device HYB3165800ATis a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high pe...

HYB3165800AJ

This device HYB3165800AJis a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high pe...

HYB3165165T-50

This HYB3165165T-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high p...

HYB3165165T(L) -50

HYB3165160T-60

This device HYB3165160T-60is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve...

HYB3165160T-50

This device HYB3165160T-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achiev...