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HYS64D128021HBDL-6-B

Features: • Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules• Two ranks 128M * 64 organization• Built with stacked 512 Mbit DDR SDRAMs dies in PTFBGA68 package• JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM)• Single +2.5V (± 0.2 V) power sup...

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SeekIC No. : 004369358 Detail

HYS64D128021HBDL-6-B: Features: • Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules• Two ranks 128M * 64 organization• Built with stacked 512 Mbit DDR SDRAMs dies in PTFBGA68 package• J...

HYS64D128021HBDL-6-B Data Sheet

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Part Number:
HYS64D128021HBDL-6-B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules
• Two ranks 128M * 64 organization
• Built with stacked 512 Mbit DDR SDRAMs dies in PTFBGA68 package
• JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM)
• Single +2.5V (± 0.2 V) power supply and +2.6 V (± 0.2 V) power supply for DDR400
• Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• All inputs and outputs SSTL_2 compatible
• Serial Presence Detect with E2PROM
• Jedec standard form factor: 67.60 mm * 31.75 mm * 3.80 mm
• Gold plated contacts


Specifications

Parameter
Symbol
Values
Unit
Note/Test
Condition
Min.
typ.
Max.
Voltage on I/O pins relative to VSS
VIN, VOUT
0.5
-
VDDQ+0.5
V
-
Voltage on inputs relative to VSS
VIN
-1
-
+3.6
V
-
Voltage on VDD supply relative to VSS
VDD
-1
-
+3.6
V
-
Voltage on VDDQ supply relative to VSS
VDDQ
-1
-
+3.6
V
-
Operating temperature (ambient)
TA
0
-
+70
°C
-
Storage temperature (plastic)
TSTG
-55
-
+150
°C
-
Power dissipation (per SDRAM component)
PD
-
1
-
W
-
Short circuit output current
IOUT
-
50
-
mA
-

Attention: Permanent damage to the device may occur if "Absolute Maximum Ratings" are exceeded. This is a stress rating only, and functional operation should be restricted to recommended operation conditions. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit.




Description

The HYS64D128021HBDL-6-B are industry standard 200-Pin Small Outline Dual-In-Line Memory Modules (SO-DIMMs) organized as 128M × 64. The memory array is designed with Double Data Rate Synchronous DRAMs (DDR SDRAM). A variety of decoupling capacitors are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer




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