Purchase I3N90A, In-stock I3N90A From SeekIC.
- Table of contents:
I3N90A
-
Suppliers
DataSheet
General Description
I3N90A Maximum Ratings
| Symbol | Characteristic |
Value |
Units |
| VDSS | Drain-to-Source Voltage |
900 |
V |
| ID | Continuous Drain Current (TC=25 ) |
3 |
A |
| Continuous Drain Current (TC=100 ) |
1.9 | ||
| IDM | Drain Current-Pulsed |
12 |
A |
| VGS | Gate-to-Source Voltage |
±30 |
V |
| EAS | Single Pulsed Avalanche Energy |
286 |
mJ |
| IAR | Avalanche rrent |
3 |
A |
| EAR | Repetitive Avalanche Energy |
10 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
1.5 |
V/ns |
| PD | Total Power Dissipation (TA=25 )* |
3.1 |
W |
| Total Power Dissipation (TA=25) Linear Derating Factor |
100 0.8 |
W W/ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |
I3N90A Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 25 A (Max.) @ VDS = 900V
` Low RDS(ON) : 4.679 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 25 A (Max.) @ VDS = 900V
` Low RDS(ON) : 4.679 (Typ.)
- Datasheet:
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