Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitancemproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON) : 1.81 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Volta...
I5N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitancemproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON) ...
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| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC=25) | 4.5 | A |
| Continuous Drain Current (TC=100) | 2.8 | A | |
| IDM | Drain Current-Pulsed | 18 | V |
| VGS | Gate-to-Source Voltage | +30 | mJ |
| EAS | Single Pulsed Avalanche Energy | 331 | A |
| IAR | Avalanche Current | 4.5 | mJ |
| EAR | Repetitive Avalanche Energy | 11 | V/ns |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | W |
| PD | Total Power Dissipation (TC=25) Linear Derating Factor |
110 0.88 |
W W/ |
| TJ , TSTG | Operating Junction and Storage Temperature Range | - 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds | 300 |