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Part Number: IC61C1024
Description: The ICSI IC61C1024 and IC61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAM...


Description: The ICSI IC61C1024 and IC61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAM...
The ICSI IC61C1024 and IC61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IC61C1024 and IC61C1024L are available in 32-pin 300mil SOJ, and 8*20mm TSOP-1, and 8*13.4mm TSOP-1 packages.
|
Symbol |
Parameter |
Value |
Unit |
| VTERM | Terminal Voltage with Respect to GND |
0.5 to +7.0 |
V |
| TBIAS | Temperature Under Bias |
55 to +125 |
|
| TSTG | Storage Temperature |
65 to +150 |
|
| PT | Power Dissipation |
1.5 |
W |
| IOUT | DC Output Current (LOW) |
20 |
mA |
IC61C1024
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