IC62C256

The IC62C256 is designed as one kind of 32K x 8 low power CMOS static RAM that is fabricated using ICSI's high performance, low power CMOS technology. Features of the IC62C256 are:(1)access time: 45, 70 ns;(2)low active power: 200 mW (typical);(3)low standby power: 250 uW (typical) CMOS standby and 28 mW (typical) TTL standby;(4)fully static operation: no clock or refresh required;(5)TTL compatible inputs and outputs;(6)single 5 V power supply. And this device is pin compatible with other 32k x 8 SRAMs in 330 mil SOP or 8 x 13.4 mm TSOP-1 package.

The absolute maximum ratings of the IC62C256 can be summarized as:(1)terminal voltage with respect to GND: -0.5 V to +7.0 V;(2)temperature under bias: -55 to +125 ;(3)storage temperature: -65 to +150 ;(4)power disipation: 0.5 W;(5)DC output current (low): 20 mA.

The electrical characteristics of the IC62C256 can be summarized as:(1)output high voltage: 2.4 V;(2)output low voltage: 0.4 V;(3)input high voltage: 2.2 to Vcc+0.5 V;(4)input low voltage: -0.3 V to 0.8 V;(5)input leakage: -2 to 2 uA or -10 to 10 uA;(6)output leakage: -2 to 2 uA or -10 to 10 uA. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.