Features: • Working Peak Reverse Voltage Range − 5.0 V to 45 V
• Peak Power − 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 A Above 10 V
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available*Specifications
| Rating |
Symbol |
Value |
Unit |
Peak Power Dissipation (Note 1)
@ TL 25°C |
PPK |
1500 |
W |
Steady State Power Dissipation @ TL 75°C, Lead Length = 3/8
Derated above TL = 75°C |
PD |
5.0
20 |
W
mW/°C |
| Thermal Resistance, Junction−to−Lead |
RJL |
20 |
°C/W |
Forward Surge Current (Note 2)
@ TA = 25°C |
IFSM |
200 |
A |
| Operating and Storage Temperature Range |
TJ, Tstg |
− 65 to +175 |
°C |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
DescriptionMosorb devices of the ICTE−5 are designed to protect voltage sensitive components from high voltage, high−energy transients. The ICTE−5 has excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor's exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
ICTE−5 Data Sheet
