Purchase IDB09E60, In-stock IDB09E60 From SeekIC.
MFG:moseft Package Cooled:INFINEON D/C:07+
- Table of contents:
IDB09E60
-
Suppliers
DataSheet
General Description
IDB09E60 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Repetitive peak reverse voltage | VRRM | 600 | V |
| Continous forward current TC=25°C TC=90°C |
IF | 19.3 13 |
A |
| Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave |
IFSM | 40 | |
| Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 |
IFRM | 29.5 | |
| Power dissipation TC=25°C TC=90°C |
Ptot | 57.7 32.7 |
W |
| Operating and storage temperature | Tj , Tstg | -55...+175 | °C |
| Soldering temperature 1.6mm(0.063 in.) from case for 10s |
TS | 255 | °C |
IDB09E60 Features
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
IDB09E60
PDF/DataSheet Download
- Datasheet: IDB09E60
- File Size: 202946 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
- ·IDB06E60
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 202067 KB
- ·IDB09E120
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 204040 KB
- ·IDB12E120
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 202812 KB
- ·IDB15E60
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 202689 KB
- ·IDB18E120
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 203830 KB
- ·IDB23E60
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 205889 KB
- ·IDB30E120
- INFINEON [Infineon Technologies AG]
- Fast Switching EmCon Diode
- 216079 KB
- ·IDB31
- GE [General Semiconductor]
- PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE
- 148184 KB
IDB09E60 Relative Products
Hotspot Suppliers Product
2208RV1.2
Price: 1-1.5 USD
2208RV1.2, SOP, Infineon
681033A
Price: 18-20 USD
RF Transistor, 150W,30ZHM, 50V
SE718M-LF
Price: 2.5-3.5 USD
SE718M-LF, QFP-128, Samsung semiconductor
ATMEGA8-16AU
Price: 1.5-1.7 USD
CMOS, 8-bit microcontroller, AVR, QFP, 4.5-5.5V
BQ500210EVM-689
Price: 100-120 USD
Qi compliant wireless, power transmitter manager, –0.3 to 3.8 V, Intelligent Control
STV9936AA
Price: 1-10 USD
12ns, triple-channel, 120V, high voltage, video amplifier, DC-coupling mode
MRF329
Price: 30-40 USD
broadband, RF power transistor, NPN silicon, TO-57s, 35 Vdc, 270 Watts power dissipation
L5972D013TR
Price: 0.1-3 USD
switching regulator, SOP, -1 to 40V, zero load current operation, internal current limiting
MSP430F1611IPM
Price: 1-10 USD
mixed signal microcontroller, -0.3 V to 4.1 V, Five Power-Saving Modes, ±2 mA, QFP
HCPL-3120-500E
Price: 0.1-0.8 USD
IGBT Gate Drive Optocoupler, SOP8, 25mA, 5 Volts, Low Level Output Voltage
TPS3803-01DCKR
Price: 0.2-0.6 USD
SOT-353, voltage detector, 3.3 V, Single Voltage Detector, 3 μA, supervisory circuit, ±10 mA
INA118U
Price: 2.45-2.95 USD
general purpose instrumentation amplifier, 800KHZ, 8SOIC, ±1.35V, 350μA, 110dB
