Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
IDB10S60C: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
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| Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V | ||
| Forward Continuous Current : | 10 A | Max Surge Current : | 76 A | ||
| Forward Voltage Drop : | 1.7 V | Maximum Reverse Leakage Current : | 140 uA | ||
| Operating Temperature Range : | - 55 C to + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |
| Technical/Catalog Information | IDB10S60C |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 140A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | 480pF @ 1V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IDB10S60C IDB10S60C |