IDB23E60

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Reverse Recovery Time (trr): 120ns
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 50µA @ 600V
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 41A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
Supplier Device Package: PG-TO263-3-2


Features:

• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling


Specifications

Parameter	Symbol	Value	Unit
Repetitive peak reverse voltage	VRRM	600	V
Continous forward current TC=25°C TC=90°C	IF	41 28	A
Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave	IFSM	89
Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5	IFRM	65
Power dissipation TC=25°C TC=90°C	Ptot	115 65	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
Soldering temperature 1.6mm(0.063 in.) from case for 10s	TS	255	°C