Purchase IDB31, In-stock IDB31 From SeekIC.
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IDB31
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DataSheet
General Description
IDB31 Maximum Ratings
| SYMBOL | VALUE | UNIT | |
| Power dissipation | Ptot | 150 (NOTE 1) | mW |
| Repetitive peak on-state current tp=20µs, f=100Hz |
ITRM | 2 | Amps |
| Operating junction temperature rang at tp < 1 s, Tamb = 25 |
TJ | -40 to +125 | |
| Storage temperature range | TS | -40 to +125 | |
| Thermal resistance junction to ambient air | RthA | 400 (NOTE 1) | /W |
IDB31 Features
·Intend for use in triac and thyristors circuits
·VBO: 30V to 34V
·Excellent Breakover Voltage
·Symmetry: typ. 1%
·Low Breakover Current: 20µA typ.
·Marking: B31
·Bidirectional Operation:
·Pin 2 and 3 connected to the circuit
·Pin 1 has to stay open
·VBO: 30V to 34V
·Excellent Breakover Voltage
·Symmetry: typ. 1%
·Low Breakover Current: 20µA typ.
·Marking: B31
·Bidirectional Operation:
·Pin 2 and 3 connected to the circuit
·Pin 1 has to stay open
IDB31 Connection Diagram
IDB31
PDF/DataSheet Download
- Datasheet: IDB31
- File Size: 148184 KB
- Manufacturer: GE [General Semiconductor]
- Click here to Download
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