Purchase IDD04S60C, In-stock IDD04S60C From SeekIC.
MFG:INFINEON Package Cooled:TO-263 D/C:05+
- Table of contents:
IDD04S60C
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Suppliers
DataSheet
General Description
IDD04S60C Maximum Ratings
| Value | Parameter | Symbol | Conditions | Unit |
| Continuous forward current RMS forward current Surge non-repetitive forward current, sine halfwave Repetitive peak forward current Non-repetitive peak forward current |
IF IF,RMS IF,SM IF,RM IF,max |
TC <130 f=50 Hz TC=25,tp=10ms Tj =150 , TC =100 ,D=0.1 TC=25 ,tp=10s |
4 5.6 32 18 132 |
A |
| i2t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature |
i2dt VRRM dv/dt Ptot Tj,Tstg |
TC=25 ,tp=10ms VR= 0...480 TC =25 |
5.1 600 50 37 -55...175 |
A2s V V/ns W |
IDD04S60C Features
· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery/ No forward recovery
· No temperature influence on the switching behavior
· High surge current capability
· Pb-free lead plating; RoHS compliant for target applications
· Qualified according to JEDEC1)
· Breakdown voltage tested at 5mA2)
· Switching behavior benchmark
· No reverse recovery/ No forward recovery
· No temperature influence on the switching behavior
· High surge current capability
· Pb-free lead plating; RoHS compliant for target applications
· Qualified according to JEDEC1)
· Breakdown voltage tested at 5mA2)
IDD03E60
PDF/DataSheet Download
- Datasheet: IDD03E60
- File Size: 187464 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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