IDD04S60C

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Reverse Leakage Current : 50 uA
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Max Surge Current : 32 A
Forward Continuous Current : 4 A
Forward Voltage Drop : 1.7 V
Package / Case : TO-252


Features:

^· Revolutionary semiconductor material - Silicon Carbide
^· Switching behavior benchmark
^· No reverse recovery/ No forward recovery
^· No temperature influence on the switching behavior
^· High surge current capability
^· Pb-free lead plating; RoHS compliant for target applications
^· Qualified according to JEDEC^1)
· Breakdown voltage tested at 5mA²⁾


Specifications

Value	Parameter	Symbol	Conditions	Unit
Continuous forward current RMS forward current Surge non-repetitive forward current, sine halfwave Repetitive peak forward current Non-repetitive peak forward current	IF IF,RMS IF,SM IF,RM IF,max	TC <130 f=50 Hz TC=25,tp=10ms Tj =150 , TC =100 ,D=0.1 TC=25 ,tp=10s	4 5.6 32 18 132	A
i2t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature	i2dt VRRM dv/dt Ptot Tj,Tstg	TC=25 ,tp=10ms VR= 0...480 TC =25	5.1 600 50 37 -55...175	A2s V V/ns W

Parameters:

Technical/Catalog Information	IDD04S60C
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9V @ 4A
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	50A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tape & Reel (TR)
Capacitance @ Vr, F	130pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDD04S60C IDD04S60C