Schottky (Diodes & Rectifiers) SIC DIODEN
IDH04SG60C: Schottky (Diodes & Rectifiers) SIC DIODEN
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| Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V | ||
| Forward Continuous Current : | 4 A | Max Surge Current : | 18 A | ||
| Recovery Time : | 10 ns | Forward Voltage Drop : | 2.1 V | ||
| Maximum Reverse Leakage Current : | 0.3 uA | Maximum Power Dissipation : | 43 W | ||
| Operating Temperature Range : | - 55 C to + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Technical/Catalog Information | IDH04SG60C |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 2.3V @ 4A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 25A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220-2 |
| Packaging | Tube |
| Capacitance @ Vr, F | 80pF @ 1V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IDH04SG60C IDH04SG60C |